* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A
* Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A
* Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A
* Max r.

It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal perform.

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal perf.

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